TAMGÖR ELEKTRONİK undertakes design and production for wideband amplifiers in accordance with the needs of our customers. These products are manufactured with the following features based on the model TA.
Part of these products offer the best efficiency and performance in the industry with utilization of Gallium Nitride (GaN) technology. Additionally, our wideband amplifiers can be customized to better match with the requirements of customers.
Package information or dimensions for each product are available on the products detail page or data page for each device.
Part of these products offer the best efficiency and performance in the industry with utilization of Gallium Nitride (GaN) technology. Additionally, our wideband amplifiers can be customized to better match with the requirements of customers.
Package information or dimensions for each product are available on the products detail page or data page for each device.
MAIN SPECIFICATIONS
- GaN-on-SiC HEMT High Power Amplifier
- Wideband operation at up to 6 GHz
- 50 Ohm input / output impedance
- High Efficiency
- Small and light